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NCE2010E

NCE Power Semiconductor
Part Number NCE2010E
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E ...
Datasheet PDF File NCE2010E PDF File

NCE2010E
NCE2010E

Overview
http://www.
ncepower.
com Pb Free Product NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2010E NCE2010E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pul...


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