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NCE2012

NCE Power Semiconductor
Part Number NCE2012
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 us...
Datasheet PDF File NCE2012 PDF File

NCE2012
NCE2012

Overview
http://www.
ncepower.
com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram Application ● DC/DC Converter ● Notebook Vcore Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2012 NCE2012 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TA=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage...


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