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HFP2N60S

SemiHow
Part Number HFP2N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES ƒ Originati...
Datasheet PDF File HFP2N60S PDF File

HFP2N60S
HFP2N60S

Overview
HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.
0 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 6.
0 nC (Typ.
) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 2.
0 1.
35 8.
0 ρ30 120 2.
0 5.
4 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ഒ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate ...


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