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HFP2N65S

SemiHow
Part Number HFP2N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 Ω ID = 1.8 A FEATURES  Originative...
Datasheet PDF File HFP2N65S PDF File

HFP2N65S
HFP2N65S

Overview
HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.
0 Ω ID = 1.
8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.
0 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 5.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 1.
8 1.
1 7.
2 ±30 100 1.
8 5.
4 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Te...


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