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HFP2N60U

SemiHow
Part Number HFP2N60U
Manufacturer SemiHow
Description N-Channel MOSFET
Published Apr 18, 2016
Detailed Description HFP2N60U HFP2N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robu...
Datasheet PDF File HFP2N60U PDF File

HFP2N60U
HFP2N60U

Overview
HFP2N60U HFP2N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 5.
5 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested Nov 2013 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 2.
0 1.
3 8.
0 ρ30 116 2.
0 5.
4 4.
5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 54 0.
43 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
2.
32 -62.
5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͤ͑͢͡ HFP2N60U Package Marking and Odering Information Device Marking Week Marking Package Packing HFP2N60U YWWX TO-220 Tube HFP2N60U YWWXg TO-220 Tube Quantity 50 50 RoHS Status Pb Free Halogen Free Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 1.
0 A 2.
5 -- Off Characteristics BVDSS ǻBVDSS /ǻTJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Charact...


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