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2SD1221

KEXIN
Part Number 2SD1221
Manufacturer KEXIN
Description NPN Transistors
Published Jun 13, 2015
Detailed Description SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.)...
Datasheet PDF File 2SD1221 PDF File

2SD1221
2SD1221

Overview
SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.
4 V (typ.
) (IC = 3 A, IB = 0.
3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 +9.
70 0.
2 -0.
2 TO-252 6.
50+0.
15 -0.
15 5.
30+0.
2 -0.
2 2.
30 +0.
1 -0.
1 0.
50 +0.
8 -0.
7 +1.
50 0.
15 -0.
15 0.
80+0.
1 -0.
1 0.
127 m ax + 0.
155 .
5 5 -0.
15 3.
80 Unit: mm +02.
65 .
25 -0.
1 +00.
50 .
15 -0.
15 +01.
50 .
28 -0.
1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta = 25℃ Tc = 25℃ ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC IB PC TJ Tstg 2.
3 4 .
60 +0.
15 -0.
15 0.
60+ 0.
1 - 0.
1 Rating 60 60 7 3 0.
5 1 20 150 -55 to 150 Unit V A W ℃ 1 Base 2 Collector 3 Emitter Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitte voltage DC current gain Turn-on time Storage time Fall time Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 50 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 60 V , IE= 0 IEBO VEB= 7V , IC=0 VCE(sat) IC=3 A, IB=300mA VBE(sat) IC=3 A, IB=300mA VBE VCE= 5V, IC= 500mA hFE(1) VCE= 5V, IC= 500mA hFE(2) VCE= 5V, IC= 3 A ton tstg See specified Test Circuit tf Cob VCB= 10V, IE= 0,f=1MHz fT VCE= 5V, IC= 500mA Min Typ Max Unit 60 60 V 7 0.
1 uA 0.
1 0.
4 1 1.
2 V 0.
7 1 60 300 20 0.
8 1.
5 us 0.
8 70 pF 3 MHz ■ Classification of hfe(1) Type 2SD1221-O Range 60-120 2SD1221-Y 100-200 2SD1221-G 150-300 www.
kexin.
com.
cn 1 SMD Type NPN Transistors 2SD1221 Switching Time Test Circuit 20 μs IB1 INPUT OUTPUT IB1 15 Ω IB2 IB2 VCC = 30 V IB1 = −IB2 = 0.
2 A, DUTY CYCLE ≤ 1% ...


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