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K3115B

Renesas
Part Number K3115B
Manufacturer Renesas
Description N-CHANNEL POWER MOSFET
Published Jul 6, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel...
Datasheet PDF File K3115B PDF File

K3115B
K3115B

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115B-S17-AY Note Isolated TO-220 Note Pb-free (This product does not contain Pb in External electrode.
) FEATURES • Low gate charge QG = 21 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 6.
0 A) • Gate voltage rating : ±30 V • Low on-state resistance RDS(on) = 1.
2 Ω MAX.
(VGS = 10 V, ID = 3.
0 A) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energ...


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