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K3114

NEC
Part Number K3114
Manufacturer NEC
Description 2SK3114
Published Nov 22, 2009
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION P...
Datasheet PDF File K3114 PDF File

K3114
K3114

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES • Low on-state resistance: RDS(on) = 2.
2 Ω MAX.
(VGS = 10 V, ID = 2.
0 A) • Low gate charge: QG = 15 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 4.
0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±4.
0 ±16 30 2.
0 150 –55 to +150 4.
0 10.
7 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) www.
DataSheet4U.
com Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 IAS EAS Single Avalanche Energy Note2 Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13337EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 1998 2SK3114 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Ga...


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