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K3116

NEC
Part Number K3116
Manufacturer NEC
Description 2SK3116
Published Apr 6, 2012
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel...
Datasheet PDF File K3116 PDF File

K3116
K3116

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3116 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3116 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION PART NUMBER 2SK3116 2SK3116-S 2SK3116-ZJ PACKAGE TO-220AB TO-262 TO-263 FEATURES •Low gate charge QG = 26 nC TYP.
(ID = 7.
5 A, VDD = 450 V, VGS = 10 V) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 1.
2 Ω MAX.
(VGS = 10 V, ID = 3.
75 A) •Avalanche capability ratings www.
DataSheet.
co.
kr ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±7.
5 ±30 1.
5 70 150 −55 to +150 7.
5 37.
5 3.
5 V V A A W W °C °C A mJ V/ns Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt Note2 Note2 IAS EAS dv/dt Note3 Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 → 0 V 3.
IF ≤ 3.
0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D13339EJ2V0DS00 (2nd edition) Date Published May 2002 NS CP (K) Printed in Japan The mark 5 shows major revised points.
© 1998 Datasheet pdf - http://www.
DataSheet4U.
net/ 2SK3116 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHRACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Rever...


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