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NCE1520

NCE Power Semiconductor
Part Number NCE1520
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jan 25, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE1520 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 us...
Datasheet PDF File NCE1520 PDF File

NCE1520
NCE1520

Overview
http://www.
ncepower.
com Pb Free Product NCE1520 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Boost converters ● LED backlighting ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE1520 NCE1520 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous ID (100℃) Drain Current-Continuous(TC=100℃) IDM Pulsed Drain Current PD Maximum Power Dissipation Derating factor EAS Single pulse avalanche energy (Note 5) TJ,TSTG Operating Junction and Storage Temperature Range Limit 150 ±20 20 14 40 75 0.
5 200 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE1520 Thermal Characteristic RθJC Thermal Resistance, Junction-to-Case (Note 2) 2.
0 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current On Characteristics (Note 3) VGS=0V ID=250μA VDS=150V,VGS=0V VGS=±20V,VDS=0V 150 165 --- 1 ±100 V μA nA VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Dynamic Characteristics (Note4) VDS=VGS,ID=250μA VGS=10V, ...


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