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F59L2G81A

Part Number	F59L2G81A
Manufacturer	Elite Semiconductor
Description	2 Gbit (256M x 8) 3.3V NAND Flash Memory
Published	Feb 16, 2016
Detailed Description	ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (256M + 16M) x 8bit - Data ...
Datasheet	F59L2G81A PDF File

Overview

ESMT Flash FEATURES  Voltage Supply: 3.
3V (2.
7V ~ 3.
6V)  Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte  Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.
) - Block Erase time: 3.
5ms (Typ.
)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L2G81A 2 Gbit (256M x 8) 3.
3V NAND Flash Memory  Reliable CMOS Floating Gate Technology - ECC Requirement: 4bi...

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