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DF2B6.8CT

Toshiba Semiconductor
Part Number DF2B6.8CT
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 8, 2016
Detailed Description TOSHIBA Diodes for Protecting against ESD DF2B6.8CT DF2B6.8CT Product for Use Only as Protection against Electrostatic...
Datasheet PDF File DF2B6.8CT PDF File

DF2B6.8CT
DF2B6.8CT


Overview
TOSHIBA Diodes for Protecting against ESD DF2B6.
8CT DF2B6.
8CT Product for Use Only as Protection against Electrostatic Discharge (ESD) *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application.
0.
6±0.
05 Unit in mm CATHODE MARK 1.
0±0.
05 0.
25±0.
03 0.
25±0.
03 0.
65 0.
05±0.
03 Abusolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150* 150 −55 to 150 Unit mW °C °C 0.
38 +0.
02 -0.
03 0.
5±0.
03 0.
05±0.
03 *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, pad dimension o...



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