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2SA1768

ON Semiconductor
Part Number 2SA1768
Manufacturer ON Semiconductor
Description Bipolar Transistor
Published Mar 22, 2016
Detailed Description Ordering number : EN3582A 2SA1768 Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP http://onsemi.com Appl...
Datasheet PDF File 2SA1768 PDF File

2SA1768
2SA1768


Overview
Ordering number : EN3582A 2SA1768 Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP http://onsemi.
com Applicaitons • Color TV sound output, converter, inverter Features • Adoption of MBIT process • High breakdown voltage, large current capacity • Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --180 --160 --6 --0.
7 --1.
5 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7540-001 6.
9 1.
45 2.
5 1.
05 2SA1768S-AN 2SA1768T-AN Product & Package Information • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs.
/box Marking(NMP(Taping)) A1768 RANK LOT No.
0.
6 0.
5 0.
9 15.
0 4.
5 1.
0 1.
0 1.
0 12 2.
54 3 0.
45 1 : Emitter 2 : Collector 2.
54 3 : Base NMP(Taping) Semiconductor Components Industries, LLC, 2013 August, 2013 Electrical Connection 2 3 1 82212 TKIM TC-00002804/90503TN (KT)/83098HA (KT)/5110MO, TS No.
3582-1/7 2SA1768 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=--120V, IE=0A VEB=--4V, IC=0A...



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