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KF4N60I

KEC
Part Number KF4N60I
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 23, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe M...
Datasheet PDF File KF4N60I PDF File

KF4N60I
KF4N60I

Overview
SEMICONDUCTOR TECHNICAL DATA KF4N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 3.
2A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 3.
2 2.
0 12* 130 3.
3 4.
5 59.
5 0.
48 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj 150 Tstg -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.
1 110 * : Drain current limited by maximum junction temperature.
UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D KF4N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_ 0.
10 G 0.
96 MAX H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
50 +_ 0.
10 M 0.
50 +_0.
10 N 0.
70 MIN O 0.
1 MAX 123 O 1.
GATE 2.
DRAIN 3.
SOURCE DPAK (1) KF4N60I AH CJ BD M N G FF 123 K E P L 1.
GATE 2.
DRAIN 3.
SOURCE DIM A B C D E F G H J K L M N P MILLIMETERS 6.
6 +_ 0.
2 6.
1 +_ 0.
2 5.
34 +_0.
3 0.
7 +_ 0.
2 9.
3 +_0.
3 2.
3+_ 0.
2 0.
76 +_ 0.
1 2.
3 +_ 0.
1 0.
5+_ 0.
1 1.
8 +_ 0.
2 0.
5 +_ 0.
1 1.
0 +_ 0.
1 0.
96 MAX 1.
02 +_ 0.
3 IPAK(1) G S 2013.
8.
05 Revision No : 0 1/6 KF4N60D/I ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V Breakdown Voltage Temperature Coefficient Drain Cut-off Current BVDSS/ Tj ID=250 , Referenced to 25 IDSS...


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