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KF4N60F

KEC
Part Number KF4N60F
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 23, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KF4N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOS...
Datasheet PDF File KF4N60F PDF File

KF4N60F
KF4N60F

Overview
SEMICONDUCTOR TECHNICAL DATA KF4N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 4* 2.
4* 12* 130 3.
3 4.
5 37.
9 0.
3 150 -55 150 3.
3 62.
5 * : Drain current limited by maximum junction temperature.
UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O E G B K LM D NN J R H 123 1.
GATE 2.
DRAIN 3.
SOURCE * Single Gauge Lead Frame DIM MILLIMETERS A 10.
16 +_ 0.
2 B 15.
87 +_ 0.
2 C 2.
54 +_ 0.
2 D 0.
8 +_ 0.
1 E 3.
18 +_ 0.
1 F 3.
3 +_ 0.
1 G 12.
57 +_ 0.
2 H 0.
5 +_ 0.
1 J 13.
0 +_ 0.
5 K 3.
23 +_ 0.
1 L 1.
47 MAX M 1.
47 MAX N 2.
54 +_ 0.
2 O 6.
68 +_ 0.
2 Q 4.
7 +_ 0.
2 R 2.
76 +_ 0.
2 TO-220IS (1) PIN CONNECTION D G S 2013.
6.
03 Revision No : 0 1/6 KF4N60F ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V Breakdown Voltage Temperature Coefficient Drain Cut-off Current BVDSS/ Tj ID=250 , Referenced to 25 IDSS VDS=600V, VGS=0V, Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic Vth IGSS RDS(ON) VDS=VGS, ID=250 VGS= 30V, VDS=0V VGS=10V, ID=2A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on...


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