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HFS10N80

SemiHow
Part Number HFS10N80
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HFS10N80 Dec 2010 HFS10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 9.4 A FEATURES ‰ Originativ...
Datasheet PDF File HFS10N80 PDF File

HFS10N80
HFS10N80

Overview
HFS10N80 Dec 2010 HFS10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.
92 ȍ ID = 9.
4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
92 ȍ (Typ.
) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 9.
4* 5.
9* 36.
0* ρͤ͡ 920 9.
4 6.
5 4.
5 PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 65 0.
52 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
1.
93 62.
5 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡ HFS10N80 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
7 A 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125ఁ VGS = 30 V, VDS...


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