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SMS3400A

SeCoS
Part Number SMS3400A
Manufacturer SeCoS
Description N-Channel MOSFET
Published Apr 2, 2016
Detailed Description Elektronische Bauelemente SMS3400A 5.8A , 30V , RDS(ON) 32 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SMS3400A PDF File

SMS3400A
SMS3400A

Overview
Elektronische Bauelemente SMS3400A 5.
8A , 30V , RDS(ON) 32 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3400A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING R0A PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
10 2.
95 1.
20 1.
7 0.
89 1.
3 1.
70 2.
3 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
18 0.
55 REF.
0.
08 0.
20 0.
6 REF.
0.
95 BSC.
Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 3 VGS ±12 ID 5.
8 IDM 30 Maximum Power Dissipation 1 TA=25°C TA=70°C Thermal Resistance Junction-Ambient PD RθJA1 RθJA2 1.
4 0.
9 t≦10s, 89 313 Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V A A W °C / W °C http://www.
SeCoSGmbH.
com/ 07-Nov-2018 Rev.
G Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMS3400A 5.
8A , 30V , RDS(ON) 32 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage BVDSS VGS(th) 30 - - V VGS=0, ID=250µA 0.
7 - 1.
4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V, VDS=0 Drain-Source Leakage Current IDSS - - 1 µA VDS=24V, VGS=0 Forward Transfer conductance Diode Forward Voltage 4 g...


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