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SMS3401A

SeCoS
Part Number SMS3401A
Manufacturer SeCoS
Description P-Channel MOSFET
Published Apr 2, 2016
Detailed Description Elektronische Bauelemente SMS3401A -4.2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET RoHS Compliant...
Datasheet PDF File SMS3401A PDF File

SMS3401A
SMS3401A

Overview
Elektronische Bauelemente SMS3401A -4.
2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3401A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES  Lower Gate Charge  Simple Drive Requirement  Fast Switching Characteristic MARKING R1A SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
10 2.
65 1.
20 1.
40 0.
89 1.
17 1.
78 2.
04 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
09 0.
18 0.
35 0.
65 0.
08 0.
20 0.
6 REF.
0.
95 BSC.
PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch    ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current 2 Maximum Power Dissipation 1 Thermal Resistance Junction-Ambient 2 VGS ID PD RθJA ±12 -4.
2 400 313 Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 Unit V V A mW °C / W °C http://www.
SeCoSGmbH.
com/ 22-May-2015 Rev.
D Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMS3401A -4.
2A , -30V , RDS(ON) 60 m P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 3 Gate-Source Leakage Current V(BR)DSS -30 - - V VGS=0, ID= -250μA VGS(th) -0.
7 - -1.
3 V VDS=VGS, ID= -250μA IGSS - - ±100 nA VGS= ±12V, VDS=0 Drain-Source Leakage Current Forward Tranconductance 3 IDSS - - -1 μA VDS= -24V, VGS=0 gfs 7 - - S VDS= -5V, ID= -5A Static Drain-Source On-Resistance 3...


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