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SMG2304

SeCoS
Part Number SMG2304
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2304 2.7A, 25V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produc...
Datasheet PDF File SMG2304 PDF File

SMG2304
SMG2304

Overview
Elektronische Bauelemente SMG2304 2.
7A, 25V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
L 3 S Top View 21 B D G Features CJ * Reliable And Rugged H * Super High Dense Cell Design For Extremely Low RDS(ON) Drain K Applications Gate Source D * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G SC-59 Dim Min Max A 2.
70 3.
10 B 1.
40 1.
60 C 1.
00 1.
30 D 0.
35 0.
50 G 1.
70 2.
10 H 0.
00 0.
10 J 0.
10 0.
26 K 0.
20 0.
60 L 0.
85 1.
15 S 2.
40 2.
80 All Dimension in mm Marking : 2304 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.
5V Continuous Drain Current,3 VGS@4.
5V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 25 ±20 2.
7 2.
2 10 1.
38 0.
01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max.
Symbol Rthj-a Ratings 90 Unit oC /W http://www.
SeCoSGmbH.
com/ 01-Jun-2002 Rev.
A Any changing of specification will not be informed individual Page 1 of 5 Elektronische Bauelemente SMG2304 2.
7A, 25V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage BVDS/ Tj VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) IGSS IDSS Static Drain-Source On-Resistance 2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance ...


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