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SMG2305

SeCoS
Part Number SMG2305
Manufacturer SeCoS
Description P-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2305 -4.2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...
Datasheet PDF File SMG2305 PDF File

SMG2305
SMG2305

Overview
Elektronische Bauelemente SMG2305 -4.
2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SMG2305 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SMG2305 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System A L 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.
70 3.
10 B 1.
40 1.
60 C 1.
00 1.
30 D 0.
35 0.
50 G 1.
70 2.
10 H 0.
00 0.
10 J 0.
10 0.
26 K 0.
20 0.
60 L 0.
85 1.
15 S 2.
40 2.
80 All Dimension in mm Marking : 2305 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg S Ratings -20 ±12 -4.
2 -3.
4 -10 1.
38 0.
01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient3 Symbol Rthj-a Ratings 90 Unit oC /W http://www.
SeCoSGmbH.
com/ 01-Jun-2002 Rev.
A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2305 -4.
2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Symbol BVDSS Min.
-20 Typ.
_ Max.
_ Unit V Test Condition VGS=0V, ID=-250uA Breakdown Voltage Temp.
Coefficient BVDS/ Tj _ -0.
1 _ V/ Reference to 25oC,ID=-1mA Gate Threshold Voltage VGS(th) -0.
5 _ _ V VDS=VGS, ID=-250uA Gate-Source Leakage Current IGSS _ _ ±100 nA VGS=±12V Drain-Source Leakage Current (Tj=25oC) Drain-So...


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