DatasheetsPDF.com

SMG2304A

SeCoS
Part Number SMG2304A
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente Description The SMG2304A utilized advanced processing techniques to achieve the lowest possibl...
Datasheet PDF File SMG2304A PDF File

SMG2304A
SMG2304A

Overview
Elektronische Bauelemente Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device.
The SMG2304A is universally used for all commercial-industrial applications.
Features * Small Package Outline * Simple Drive Requirment SMG2304A 2.
5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product A L 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.
70 3.
10 B 1.
40 1.
60 C 1.
00 1.
30 D 0.
35 0.
50 G 1.
70 2.
10 H 0.
00 0.
10 J 0.
10 0.
26 K 0.
20 0.
60 L 0.
85 1.
15 S 2.
40 2.
80 All Dimension in mm Marking : 2304A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@10V Continuous Drain Current,3 VGS@10V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range G S Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg Ratings 30 ±20 2.
5 2.
0 10 1.
38 0.
01 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-ambient 3 Max.
Symbol Rthj-a Ratings 90 Unit oC /W http://www.
SeCoSGmbH.
com/ 01-Jun-2002 Rev.
A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SMG2304A 2.
5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
Coefficient BVDS/ Tj Gate Threshold Voltage VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Gate Resistance RDS(ON) Qg Qgs Qgd ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)