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SMG2325

SeCoS
Part Number SMG2325
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2325 0.45A , 250V , RDS(ON) 1.7Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product...
Datasheet PDF File SMG2325 PDF File

SMG2325
SMG2325

Overview
Elektronische Bauelemente SMG2325 0.
45A , 250V , RDS(ON) 1.
7Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state Resistance FEATURES Simple Drive Requirement Small Package Outline MARKING 2325 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
25 3.
00 1.
30 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1, VGS@10V Pulsed Drain Current 2 Power Dissipation 3 TA=25°C TA=70°C TA=25°C ID IDM PD Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 1 RθJA Ratings 250 ±20 0.
45 0.
35 1.
4 0.
8 -55~150 156 Unit V V A A W °C °C / W http://www.
SeCoSGmbH.
com/ 15-Aug-2011 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2325 0.
45A , 250V , RDS(ON) 1.
7Ω N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current BVDSS VGS(th) IGSS 250 1.
5 - - - V VGS=0, ID=250µA - 3.
5 V VDS=VGS, ID=250µA - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS - - 1 µA VDS=250V, VGS=0 Drain-Source On-Resistance 1 Diode Forward Voltage1 RDS(ON) VSD - - 1.
7 VGS=10V, ID=0.
45A Ω - 1.
9 VGS=4.
5V, ID=0.
35A - 1.
2 V IS=0.
45A, VGS=0 Total Gate C...


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