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SMG2325 Datasheet PDF

SeCoS
Part Number SMG2325
Manufacturer SeCoS
Title N-Channel MosFET
Description The SMG2325 is the N-Channel logic enhancement mode power filed effect transistors are produced using high Cell density, DMOS trench technology. T...
Features Simple Drive Requirement Small Package Outline MARKING 2325 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Milli...

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SMG2325 SMG2325 SMG2325




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SMG2 : The G2 / SMG2 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. The design used 3 pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and surface mount packages are hermetically sealed. MIL-STD-883 environmental screening is available. Product Image Rev. V4 Electrical Specifications1: VCC = 15 V, Z0 = 50 Ω Parameter Frequency Maximum Attenuation (min.) 5 - 500 MHz 500 - 1000 MHz 1000 - 2000 MHz Insertion Loss (VCTRL = 15 V) (max.) 5 - 1000 MHz 1000 - 2000 MHz VSWR (worst case in attenuation range) 5 - 2000 MHz Flatness over Frequency (max.) (Attenuation = mi.

SMG2007-C : Elektronische Bauelemente SMG2007-C -7.2A , -20V , RDS(O ) 19mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES The SMG2007-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SC-59 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. APPLICATIONS Simple Drive Requirement Lower On-resistance Fast Switching MARKING 2007 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2007-C Le.

SMG2300 : A L * The SMG2300 provide the designer with best combination S of fast switching, low on-resistance and cost-effectiveness. * The SMG2300 is universally used for all commercial-industrial surface mount applications. 3 Top View 21 B D G Features * Low on-resistance * Capable of 2.5V gate drive * Small package outline C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating .

SMG2301 : A L The SMG2301 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2301 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Dr.

SMG2301P : The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70.

SMG2302 : RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L The SMG2302 provide the designer with the best Combination of fast switching, low on-resistance and cost-effectiveness. Features * Capable of 2.5V gate drive * Small package outline 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2302 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, VGS@4.5V Continuous Drain Current,3 VGS@4.5V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating.

SMG2302N : These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper lead frame SC-59 saves board space.  Fast switching speed.  High performance trench technology. Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Milli.

SMG2303 : A L The SMG2303 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System 3 S Top View 21 B D G C H Drain Gate Source G Marking : 2303 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25 oC ID@TA=70 oC IDM PD@TA=25 oC Tj, Tstg J K D .

SMG2304 : The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. L 3 S Top View 21 B D G Features CJ * Reliable And Rugged H * Super High Dense Cell Design For Extremely Low RDS(ON) Drain K Applications Gate Source D * Power Management in Notebook Computer * Protable Equipment * Battery Powered System G SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2304 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3 VGS@4.5V Continuous Drain Current,3 VGS@4.

SMG2304A : The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is universally used for all commercial-industrial applications. Features * Small Package Outline * Simple Drive Requirment SMG2304A 2.5A, 30V,RDS(ON) 117m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L 3 S Top View 21 B D G C H Drain Gate Source J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 2304A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuou.

SMG2305 : The SMG2305 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG2305 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Features * Super high dense cell design for extremely low RDS(ON) * Reliable and rugged Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System A L 3 S Top View 21 B D G C H Drain Gate Source G J K D SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Marking : 230.

SMG2305-C : The SMG2305-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMG2305-C meet the RoHS and Green Product requirement with full function reliability approved. SC-59 A L 3 Top View CB 1 1 2 K E 3 2 FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING 2305 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 3.00 1.20 1.70 0.89 1.40 2.00 Typ. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.047 0.207 0.5 REF. 0.95 REF. PACKAGE INFORMATION Package MPQ SC-59 3K Lea.

SMG2305A : RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D The SMG2305A provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG2305A is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Features * Simple drive requirement * Small package outline Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System Marking : 2305A A L 3 S Top View 21 B G H D C Absolute Maximum Ratings Drain Gate Source J K G S SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H .

SMG2305P : These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 1.00 Max. 3.10 3.00 1.70 1.40 1.70 2.30 0.35 0.50 REF. G H J K.

SMG2305PE : These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source .

SMG2305PE-C : These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Thermal Impedance Copper Leadframe SC-59 Saves Board Space. Fast Switching Speed. High Performance Trench Technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch ORDER INFORMATION Part Number Type SMG2305PE-C Lead (Pb)-free and Halogen-free SC-59 A L 3.




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