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SMG2328

SeCoS
Part Number SMG2328
Manufacturer SeCoS
Description N-Channel MosFET
Published Apr 20, 2016
Detailed Description Elektronische Bauelemente SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A S...
Datasheet PDF File SMG2328 PDF File

SMG2328
SMG2328

Overview
Elektronische Bauelemente SMG2328 100V, 1.
5A, 250mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SMG2328 is universally used for all commercial-industrial applications.
FEATURES  Simple drive requirement  Small package outline  Super high density cell design for extremely low RDS(ON) SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J DEVICE MARKING: D 2328 GS PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7’ inch REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
25 3.
00 1.
30 1.
70 1.
00 1.
40 1.
70 2.
30 0.
35 0.
50 REF.
G H J K L Millimeter Min.
Max.
0.
10 REF.
0.
40 REF.
0.
10 0.
20 0.
45 0.
55 0.
85 1.
15    MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1.
2 TA=25°C TA=70°C Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient 3 (Max.
) VDSS VGSS ID ID IDM PD TJ, TSTG THERMAL DATA RθJA RATING 100 ±20 1.
5 1.
2 5 1.
38 0.
008 -55~150 125 UNIT V V A A A W W / °C °C °C / W http://www.
SeCoSGmbH.
com/ 21-Nov-2013 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMG2328 100V, 1.
5A, 250mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0V, ID =250μA Gate Threshold Voltage VGS(th) 1 - 2.
5 V VDS= VGS, ID =250μA Forward Tranconductance gfs - 4 - S VDS=15V, ID =1.
5A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current(TJ=25°C) Drain-Source Leakage Current(TJ=55°C) ...


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