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RU6H9R

Ruichips
Part Number RU6H9R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Apr 26, 2016
Detailed Description RU6H9R N-Channel Advanced Power MOSFET MOSFET Features • 600V/9.5A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V • Gate charge minim...
Datasheet PDF File RU6H9R PDF File

RU6H9R
RU6H9R

Overview
RU6H9R N-Channel Advanced Power MOSFET MOSFET Features • 600V/9.
5A, RDS (ON) =0.
7Ω (Typ.
) @ VGS=10V • Gate charge minimized • Low Crss( Typ.
20pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available Pin Description TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– FEB.
, 2012 Rating 600 ±30 150 -55 to 150 ① 9.
5 ② 38 ① 9.
5 6.
2 156 62 0.
8 Unit V °C °C A A A W W °C/W 10 mJ www.
ruichips.
com RU6H9R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H9R Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 600V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±30V, VDS=0V VGS= 10V, IDS=4.
75A 600 2 1 30 34 ±100 0.
7 0.
8 V µA V nA Ω Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=9.
5A, VGS=0V I...


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