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MMBT5551

Diotec
Part Number MMBT5551
Manufacturer Diotec
Description NPN Transistor
Published May 3, 2016
Detailed Description MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Uni...
Datasheet PDF File MMBT5551 PDF File

MMBT5551
MMBT5551

Overview
MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-05-09 2.
9 ±0.
1 0.
4 3 Type Code 1 2 1.
1 1.
9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.
5 max 1.
3±0.
1 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN 250 mW SOT-23 (TO-236) 0.
01 g Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT5550 MMBT5551 Collector-Emitter-volt.
– Kollektor-Emitter-Spannung B open VCEO 140 V 160 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 160 V 180 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj -55.
.
.
+150°C TS -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 1 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE IC = 10 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2) IC = 10 mA, IB = 1 mA MMBT5550 MMBT5551 VCEsat VCEsat IC = 50 mA, IB = 5 mA MMBT5550 MMBT5551 VCEsat VCEsat Kennwerte (Tj = 25°C) Min.
Typ.
Max.
60 – 80 – – – 60 – 250 80 – 250 20 – 30 – – – – – 0.
15 V – – 0.
15 V – – 0.
25 V – – 0.
20 V 1 Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.
diotec.
com/ 1 MMBT5550 / MMBT5551 Characteristics (Tj = 2...


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