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2SC5803
Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5803 DESCRIPTION ·High Breakdown
Voltage
- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high
voltage
color display horizontal deflection ou...
Inchange Semiconductor Company
Download 2SC5803 Datasheet
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