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2SC5804

Isahaya Electronics Corporation
Part Number 2SC5804
Manufacturer Isahaya Electronics Corporation
Description SMALL-SIGNAL TRANSISTOR
Published Nov 14, 2005
Detailed Description www.DataSheet4U.com 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE...
Datasheet PDF File 2SC5804 PDF File

2SC5804
2SC5804

Overview
www.
DataSheet4U.
com 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density mounting are possible.
0.
4 Complementary with 2SC3052.
1.
2 0.
8 0.
2 0.
8 0.
2 OUTLINE DRAWING Unit：ｍｍ FEATURE ● Super-thin flat lead type package.
t=0.
45mm ● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage VCE(sat)=0.
3V max (@Ic=100mA/IB=10mA) ① ② ③ APPLICATION For hybrid IC,small type machine low frequency voltage amplify application.
0.
5 MAXIMUM RATINGS（Ta=25℃） Symbol VCBO VCEO VEBO I O Parameter Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 50 6 50 200 100 ＋125 -55～＋125 Unit V V V DataSheet4U.
com mA mW ℃ ℃ 0.
4 JEITA-：、JEDEC：－ ISAHAYA：T-USM TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 0.
25 DataShe e Pc Tj Tstg ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Collector to Emitter Breakdown voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E saturation voltage Symbol V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob NF IC=100μA, R V V V V BE Test conditions =∞ Limits Min 50 150 90 Typ ― ※ 200 2.
5 Max ― 0.
1 0.
1 800 0.
3 15 Unit V μA μA v MHz pF dB CB=50V, I E=0mA EB =6V, I C=0mA =6V, I C=1mA CE CE=6V, I C=0.
1mA IC=100mA, I B=10mA V V V CE=6V, I E=-10mA CB CE Gain bandwidth product Collector output capacitance Noise figure =6V, I E=0mA,f=1MHz =6V, I E=-0.
1mA,f=1kHz,RG=2kΩ ※ It shows hFE classification in below table.
Item hFE Abbrivation E 150～300 LE F 250～500 LF G 400～800 LG ISAHAYA ELECTRONICS CORPORATION DataSheet4U.
com DataSheet 4 U .
com www.
DataSheet4U.
com 〈SMALL-SIGNAL TRANSISTOR〉 2SC5804 FOR LOW FREQUE...


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