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2SC5809

Panasonic Semiconductor
Part Number 2SC5809
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Sep 1, 2005
Detailed Description Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed swit...
Datasheet PDF File 2SC5809 PDF File

2SC5809
2SC5809

Overview
Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching ■ Features • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.
9±0.
3 3.
0±0.
5 4.
6±0.
2 2.
9±0.
2 13.
7±0.
2 4.
2±0.
2 Solder Dip 15.
0±0.
5 φ 3.
2±0.
1 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 2.
6±0.
1 0.
55±0.
15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 −55 to +150 °C °C Unit V V V A A W 2.
54±0.
30 5.
08±0.
50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.
1 A VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.
6 A VCE = 10 V, IC = 0.
5 A, f = 1 MHz IC = 3.
0 A, Resistance loaded IB1 = 0.
6 A, IB2 = − 0.
6 A VCC = 200 V 15 8 0.
3 8 1.
1 2.
0 0.
3 0.
6 V MHz µs µs µs Min 500 100 100 Typ Max Unit V µA µA  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002 SJD00291AED 1 2SC5809 PC  Ta 35 (1) 30 25 20 15 (2) 10 5 (3) 0 0 20 40 60 80 100 120 140 160 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Wit...


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