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2SC5808

Sanyo Semicon Device
Part Number 2SC5808
Manufacturer Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Published Nov 8, 2007
Detailed Description www.DataSheet4U.com Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching ...
Datasheet PDF File 2SC5808 PDF File

2SC5808
2SC5808


Overview
www.
DataSheet4U.
com Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features • • • • Package Dimensions unit : mm 2045B [2SC5808] 6.
5 5.
0 4 High breakdown voltage.
High speed switching.
Wide ASO.
Adoption of MBIT process.
1.
5 2.
3 0.
5 0.
85 0.
7 5.
5 7.
0 0.
8 1.
6 1.
2 0.
6 7.
5 0.
5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.
3 2.
3 Package Dimensions unit : mm 2044B [2SC5808] 6.
5 5.
0 4 2.
3 1.
5 0.
5 5.
5 7.
0 0.
85 0.
5 0.
8 1 0.
6 2 3 2.
5 1.
2 1.
2 0 to 0.
2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.
3 2.
3 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2501 TS IM TA-3412 No.
7079-1/4 www.
DataSheet4U.
com 2SC5808 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ra...



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