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HFP2N60

N-Channel MOSFET

Description

HFP2N60 June 2005 HFP2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)...

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