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RFL1N10L - Intersil Corporation
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biase.
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Related Product
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFL1N10 |
Intersil Corporation |
1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs |
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| 2 | RFL1N12 |
Intersil Corporation |
1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs |
|
| 3 | RFL1N12L |
Intersil Corporation |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs |
|
| 4 | RFL1N15 |
Intersil Corporation |
1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs |
|
| 5 | RFL1N15L |
Intersil Corporation |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs |
|
| 6 | RFL1N18 |
Intersil Corporation |
1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs |
|
| 7 | RFL1N08 |
Intersil Corporation |
1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs |
|
| 8 | RFL1N20 |
Intersil Corporation |
1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs |
|
| 9 | RFL1P08 |
Intersil Corporation |
1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs |
|
| 10 | RFL1P10 |
Intersil Corporation |
1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs |
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