NPN Transistor. NTE2689 Datasheet

NTE2689 Transistor. Datasheet pdf. Equivalent


NTE NTE2689
NTE2689
Silicon NPN Transistor
Audio Power Amp
SOT23 Type Package
Description:
The NTE2689 is a silicon NPN transistor in an SOT23 surface mount type package designed for use
in audio power amplifier applications.
Features:
D High DC Current Gain
Absolute Maximum Ratings:
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Dissipation (Note 1), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Note 1. Package mounted on 99.5% alumina 10 x 8 x 0.6mm.
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorBase Breakdown Voltage
BVCBO IC = 1005 A, IE = 0
35 − − V
CollectorEmitter Breakdown Voltage BVCEO IC = 1mA, IB = 0
30 − − V
EmitterBase Breakdown Voltage
BVEBO IE = 105 A, IC = 0
5 − −V
Collector CutOff Current
ICBO VCB = 35V, IE = 0
− − 0.1 5 A
Emitter CutOff Current
IEBO VEB = 5V, IC = 0
− − 0.1 5 A
DC Current Gain
hFE VCE = 1V, IC = 100mA
160 320
CollectorEmitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA
− − 0.5 V
Transition Frequency
fT VCE = 5V, IC = 10mA
120 MHz
Collector Output Capacitance
Cob VCB = 10V, IE = 0, f = 1MHz 13 pF


NTE2689 Datasheet
Recommendation NTE2689 Datasheet
Part NTE2689
Description Silicon NPN Transistor
Feature NTE2689; NTE2689 Silicon NPN Transistor Audio Power Amp SOT−23 Type Package Description: The NTE2689 is a si.
Manufacture NTE
Datasheet
Download NTE2689 Datasheet




NTE NTE2689
.016 (0.48)
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.007 (0.2)
.051
(1.3)







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