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2SA843 Datasheet, Equivalent, Power Transistor.

Silicon PNP Power Transistor

Silicon PNP Power Transistor

 

 

 

Part 2SA843
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage : V(BR)CEO= -150V(Min) ·DC Curren t Gain : hFE= 60-200@ IC= -0.
4A ·Compl ement to Type 2SC1683 ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATI ONS ·Audio frequency power amplifier a pplications.
ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
5 A ICM Collector Current-Peak PC To tal Power Dissipation .
Manufacture Inchange Semiconductor
Datasheet
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Part 2SA843
Description Silicon PNP Power Transistor
Feature isc Silicon PNP Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage : V(BR)CEO= -150V(Min) ·DC Curren t Gain : hFE= 60-200@ IC= -0.
4A ·Compl ement to Type 2SC1683 ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATI ONS ·Audio frequency power amplifier a pplications.
ABSOLUTE MAXIMUM RATINGS( Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
5 A ICM Collector Current-Peak PC To tal Power Dissipation .
Manufacture Inchange Semiconductor
Datasheet
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2SA843

2SA843
2SA843

2SA843

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