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2SD1269
Silicon NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
2SD1269 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Complement to Type 2SB944 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification....
Inchange Semiconductor
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