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BU4508DX

Inchange Semiconductor
Part Number BU4508DX
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508DX DESCRIPTION ·Collector-Emit...
Datasheet PDF File BU4508DX PDF File

BU4508DX
BU4508DX

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8V IC Collector Current- Continuous 8A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 45 W 150 ℃ -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.
8 ℃/W isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU4508DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.
25A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 5A; IB= 1.
25A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ IC= 0.
5A; VCE= 5V hFE-2 DC Current Gain IC= 5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A Switching times tstg Storage Time tf Fall Time IC= 5A, IB1= 1.
0A; IB2= -2.
5A MIN TYP.
MAX UNIT 800 V 8V 3.
0 V 1.
03 V 1.
0 2.
0 mA 7 4.
2 2.
2 V 3.
75 μs 0.
4 μs isc website：www.
iscsemi.
cn 2 ...


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