2SD2606 TYPE TRANSISTOR Datasheet

2SD2606 Datasheet, PDF, Equivalent


Part Number

2SD2606

Description

SILICON NPN DIFFUSED TYPE TRANSISTOR

Manufacture

Panasonic

Total Page 2 Pages
Datasheet
Download 2SD2606 Datasheet


2SD2606
Power Transistors
2SD2606
Silicon NPN diffusion planar type Darlington
For power amplification
Unit: mm
s Features
q Extremely satisfactory linearity of the forward current transfer
ratio hFE
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q TO-220(c) type package enabling direct soldering of the radiating
fin to the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
500
400
12
14
7
50
1.4
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.5±0.3
2.54±0.3
1.4±0.1
0.8±0.1
2.54±0.3
123
Internal Connection
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ
Collector cutoff current
ICBO VCB = 500V, IE = 0
ICEO VCE = 400V, IE = 0
Emitter cutoff current
IEBO VEB = 12V, IC = 0
Collector to emitter voltage
VCEO(sus)*
IC = 100mA, RBE =
400
Forward current transfer ratio
hFE1
hFE2
VCE = 2V, IC = 2A
VCE = 2V, IC = 6A
500
200
Collector to emitter saturation voltage VCE(sat)
IC = 7A, IB = 70mA
Base to emitter saturation voltage VBE(sat)
IC = 7A, IB = 70mA
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 1MHz
20
Turn-on time
Storage time
Fall time
ton
tstg
IC = 7A, IB1 = 70mA, IB2 = –70mA,
tf VCC = 300V
1.5
5.0
6.5
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
70
*VCEO(sus) Test circuit
50/60Hz
mercury relay
120
5V
1
X
L 10mH
Y
15V
G
4.6±0.2
1.4±0.1
2.5±0.2
0.1+–00.3
1:Base
2:Collector
3:Emitter
TO–220 Package(c)
C
E
max Unit
100 µA
100 µA
100 mA
V
2.0 V
2.5 V
MHz
µs
µs
µs
pF
1

2SD2606
Power Transistors
60
(1)
50
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=1.4W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Area of safe operation (ASO)
10 ICP
IC
3
1
1ms
1s
t=0.1ms
0.3
0.1
Non repetitive pulse
0.03 TC=25˚C
10 30 100 300 1000
Collector to emitter voltage VCE (V)
2SD2606
2


Features Power Transistors 2SD2606 Silicon NPN d iffusion planar type Darlington For po wer amplification Unit: mm s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO -220(c) type package enabling direct so ldering of the radiating fin to the pri nted circuit board, etc. of small elect ronic equipment. s Absolute Maximum Ra tings (TC=25˚C) Parameter Symbol Ra tings Collector to base voltage Colle ctor to emitter voltage Emitter to bas e voltage Peak collector current Coll ector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 500 400 12 14 7 50 1.4 Jun ction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 10.5±0.3 2.54±0.3 1.4 ±0.1 0.8±0.1 2.54±0.3 123 Internal Connection B s Electrical Characteris tics (TC=25˚C) Parameter Symbol Con ditions min typ Collector cutoff current ICBO VCB = 500V, IE = 0 ICEO VCE.
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