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FQPF8N60

Part Number	FQPF8N60
Manufacturer	Inchange Semiconductor
Description	N-Channel Mosfet Transistor
Published	Nov 6, 2016
Detailed Description	INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID...
Datasheet	FQPF8N60 PDF File

Overview

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID= 7.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.
5 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 48 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperatur...

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