Power Transistor. MJE3055AT Datasheet

MJE3055AT Transistor. Datasheet pdf. Equivalent


Part MJE3055AT
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B.
Manufacture Inchange Semiconductor
Datasheet
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MJE3055AT
isc Silicon NPN Power Transistor
MJE3055AT
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High DC Current Gain-
: hFE= 150-260@IC= 1A
·Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 mA
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
6
A
75
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.67 /W
isc Websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



MJE3055AT
isc Silicon NPN Power Transistor
MJE3055AT
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5uA; IB= 0
V(BR)EBO Emitter -Base Breakdown Voltage
IE= 50uA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 4A ; VCE= 4V
hFE-3
Is/b
fT
DC Current Gain
IC= 10A ; VCE= 4V
Second Breakdown Collector Current
with Base Forward Biased
VCE= 37V,t= 0.5s,Nonrepetitive
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f= 500kHz
MIN TYP. MAX UNIT
80
V
100
V
6
V
1.1
V
8.0
V
1.8
V
0.7 mA
10 uA
10 uA
150
260
20
100
5
2.0
A
2.0
MHz
isc Websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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