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BDY58S

Inchange Semiconductor

Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification. ·High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S...



Inchange Semiconductor

BDY58S

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