N-channel MOSFET. 2N7002DW Datasheet

2N7002DW MOSFET. Datasheet pdf. Equivalent

2N7002DW Datasheet
Recommendation 2N7002DW Datasheet
Part 2N7002DW
Description Dual N-channel MOSFET
Feature 2N7002DW; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(B.
Manufacture JCET
Datasheet
Download 2N7002DW Datasheet




JCET 2N7002DW
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETs
2N7002DW
V(BR)DSS
60 V
Dual N-channel MOSFET
RDS(on)MAX
 5Ω@10V 
7Ω@5V  
FEATURE
z High density cell design for low RDS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
ID
115mA
SOT-363
6
5
4
1
2
3
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VDS
Drain-Source voltage
60
VGS
ID
Gate-Source voltage
Drain Current
±20
115
PD Power Dissipation
150
RӨJA Thermal Resistance from Junction to Ambient 833
TJ Junction Temperature
150
Tstg
Storage Temperature
-55-150
Unit
V
V
mA
mW
/W
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1
I,Sep,2016



JCET 2N7002DW
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test conditions
Drain-source breakdown voltage
Gate-threshold voltage *
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance *
Forward transconductance *
Drain-source on-voltage *
Diode forward voltage
Input capacitance **
Output capacitance **
Reverse transfer capacitance **
SWITCHING TIME
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
gfs
VDS(on)
VSD
Ciss
Coss
Crss
VGS=0 V, ID=250 µA
VDS=VGS, ID=250 µA
VDS=0 V, VGS=±20 V
VDS=60 V, VGS=0 V
VGS=10 V, ID=500mA
VGS=5 V, ID=50mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0 V
VDS=25V, VGS=0V, f=1MHz
Turn-on time **
td(on)
Turn-off time **
td(off)
* Pulse Test: Pulse width 300µs,duty cycle2%.
** These parameters have no way to verify.
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10V,G=25 Ω
Min
60
1
80
0.5
0.05
0.55
Typ Max Unit
1.6 2.5
±80
V
nA
80 nA
1.1 5
1.2 7
500
ms
3.75 V
0.375
1.2
50
25
V
V
pF
5
20
ns
40
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2
I,Sep,2016



JCET 2N7002DW
Typical Characteristics
1.0
0.9 Ta=25
Pulsed
0.8
Output Characteristics
VGS=4V,5V,6V
0.7
0.6 VGS=3V
0.5
0.4
VGS=2.5V
0.3
0.2
0.1 VGS=2V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE VDS (V)
1.0
0.9
VDS=3V
Pulsed
0.8
Transfer Characteristics
0.7
Ta=25
Ta=100
0.6
0.5
0.4
0.3
0.2
0.1
0.0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
8
2.0
Ta=25
Pulsed
1.8
1.6
RDS(ON) —— ID
VGS=5V
1.4
1.2
VGS=10V
1.0
0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
DRAIN CURRENT ID (A)
RDS(ON) —— VGS
7
Pulsed
6
ID=500mA
5
4
3
Ta=100
2
1
Ta=25
0
0 1 2 3 4 5 6 7 8 9 10
GATE TO SOURCE VOLTAGE VGS (V)
1
Pulsed
IS —— VSD
2.0
1.8
0.1
Ta=100
Ta=25
1.6
1.4
1.2
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
SOURCE TO DRAIN VOLTAGE VSD (V)
1.6
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1.0
25
3
Threshold Voltage
ID=250uA
50 75 100
JUNCTION TEMPERATURE Tj ()
125
I,Sep,2016







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