PLANAR TRANSISTOR. BUX82 Datasheet

BUX82 TRANSISTOR. Datasheet pdf. Equivalent


Part BUX82
Description NPN PLANAR TRANSISTOR
Feature BUX82 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44.
Manufacture Seme LAB
Datasheet
Download BUX82 Datasheet


BUX82 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.9 BUX82 Datasheet
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Em BUX82 Datasheet
Recommendation Recommendation Datasheet BUX82 Datasheet




BUX82
BUX82
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
12
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 Base
PIN 2 Emitter Case is Collector.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switchingcontrol amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DCRF amplifiers
and power oscillators.
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated)
VCESM
VCER
Collector – Emitter Voltage
Collector – Emitter Voltage
VBE = 0
WRBE = 100
VCEO
Collector – Emitter Voltage(open base)
IC Collector Current (d.c)
ICM Peak Collector Current
tp = 2ms
IB Base Current (d.c)
Ptot Total Power Dissipation Tmb = 50°C
TSTG
Storage Temperature Range
TJ Maximum Junction Temperature
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.9/99



BUX82
BUX82
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEOsust
VCERsust
Collector - Emitter Sustaining
Voltage
Collector - Emitter Sustaining
Voltage
IC = 100mA
L = 25mH
IC = 100mA
L = 15mH
IB = 0
WRBE = 100
400
500
VCE(sat)
VBE(sat)*
Collector Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
IC = 2.5A
IB = 0.5A
VCE(sat)
VBE(sat)*
Collector Emitter
Saturation Voltage
Base Emitter
Saturation Voltage
IC = 4A
IB = 1.25A
IEBO
ICES
hFE
fT
ton
ts
tf
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Transition Frequency
TurnOn Time
Storage Time
Fall Time
IC = 0
VCESMmax
IC = 0.6A
IC = 0.2A
IC ON = 2.5A
IB1 = 0.5A
VEB = 10V
VBE = 0
VCE = 5V
VCE = 10V
VCC = 250V
IB2 = 1A
Typ.
30
6
0.3
2
Max. Unit
V
V
1.5
1.4
V
3
1.6
10 mA
1 mA
MHz
0.5
3.5 ms
0.3
THERMAL CHARACTERISTICS
Rth j-mb Thermal Resistance Junction to Case
1.65 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 3/94







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