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BSS123

N-channel transistor Logic level FET

Description

Philips Semiconductors N-channel TrenchMOS transistor Logic level FET Product specification BSS123 FEATURES ’Trench’ technology Extremely fast switching Logic level compatible Subminiature surface mounting package SYMBOL g d s QUICK REFERENCE DATA VDSS = 100 V ID = 150 mA RDS(ON) ≤ 6 Ω (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mo...

NXP

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