S9011 Transistor Datasheet

S9011 Datasheet, PDF, Equivalent


Part Number

S9011

Description

NPN Silicon Epitaxial Planar Transistor

Manufacture

GME

Total Page 3 Pages
Datasheet
Download S9011 Datasheet


S9011
NPN Silicon Epitaxial Planar Transistor
FEATURES
Collector Current.(IC= 30mA
Power dissipation.(PC=200mW)
APPLICATIONS
Pb
Lead-free
AM converter, AM/FM if amplifier general purpose
transistor
Production specification
S9011
ORDERING INFORMATION
Type No.
Marking
S9011
1T
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
30
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
30
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
IC=100μA,IE=0
IC=0.1mA,IB=0
IE=100μA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=5V,IC=1mA
IC=10mA, IB= 1mA
VCE=5V,IC=1mA
VCE=5V, IC= 1mA
50 V
30 V
5V
0.1 μA
0.1 μA
28 198
0.3 V
0.65 0.75 V
150 MHz
C126
Rev.A
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1

S9011
NPN Silicon Epitaxial Planar Transistor
CLASSIFICATION OF hFE(1)
Rank
DE
F
G
Range
28-45
39-60
54-80
72-108
Production specification
S9011
H
97-146
I
132-198
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C126
Rev.A
www.gmesemi.com
2


Features NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 30 mA)  Power dissipation.(PC=200mW) APPLICATIONS Pb Lead-free  AM conv erter, AM/FM if amplifier general purpo se transistor Production specificatio n S9011 ORDERING INFORMATION Type No. Marking S9011 1T SOT-23 Package Co de SOT-23 MAXIMUM RATING @ Ta=25℃ un less otherwise specified Symbol Param eter Value VCBO Collector-Base Volta ge 50 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 30 PC Collector Dissipation 200 Tj,Tstg Ju nction and Storage Temperature -55 to +150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless othe rwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-ba se breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdow n voltage Collector cut-off current Emi tter cut-off current DC current gain Co llector-emitter saturation voltage Base-emitter voltage Transit.
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