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BL3404

GME

N-Channel Power Mosfet


Description
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.8A  RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) Pb Lead-free BL3404 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL...



GME

BL3404

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