N-channel FET. 2N7002 Datasheet

2N7002 FET. Datasheet pdf. Equivalent


ON Semiconductor 2N7002
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Description
These N-channel enhancement mode field effect transis-
tors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly suited for low-voltage, low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
D
1 TO-92
1. Source 2. Gate 3. Drain
S
G
SOT-23
(TO-236AB)
2N7002/NDS7002A
G
D
S
Ordering Information
Part Number
2N7000
2N7000-D74Z
2N7000-D75Z
2N7000-D26Z
2N7002
NDS7002A
Marking
2N7000
2N7000
2N7000
2N7000
702
712
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Min Order Qty /
Immediate Pack
Qty
10000 / 1000
2000 / 2000
2000 / 2000
2000 / 2000
3000 / 3000
3000 / 3000
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
NDS7002A/D


2N7002 Datasheet
Recommendation 2N7002 Datasheet
Part 2N7002
Description N-channel FET
Feature 2N7002; 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor 2N7000 / 2N7002 / N.
Manufacture ON Semiconductor
Datasheet
Download 2N7002 Datasheet




ON Semiconductor 2N7002
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VDGR
VGSS
ID
PD
Drain-to-Source Voltage
Drain-Gate Voltage (RGS 1 M
Gate-Source Voltage - Continuous
Gate-Source Voltage - Non Repetitive (tp < 50 S)
Maximum Drain Current - Continuous
Maximum Drain Current - Pulsed
Maximum Power Dissipation Derated above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10 Seconds
Value
2N7000 2N7002
60
60
±20
±40
200 115
500 800
400 200
3.2 1.6
-55 to 150
300
NDS7002A
Unit
V
V
V
280
1500
300
2.4
-65 to 150
mA
mW
mW/°C
°C
°C
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
RJA Thermal Resistance, Junction to Ambient
2N7000
312.5
Value
2N7002
625
NDS7002A
417
Unit
°C/W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS Zero Gate Voltage Drain
Current
IGSSF Gate - Body Leakage,
Forward
IGSSR Gate - Body Leakage,
Reverse
Conditions
Type
VGS = 0 V, ID = 10 A All
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V,
TC = 125°C
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V,
TC = 125°C
VGS = 15 V, VDS = 0 V
2N7000
2N7002
NDS7002A
2N7000
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A
VGS = -15 V, VDS = 0 V 2N7000
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A
Min. Typ. Max. Unit
60 V
1 A
1 mA
1 A
0.5 mA
10 nA
100 nA
-10 nA
-100 nA
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ON Semiconductor 2N7002
Electrical Characteristics (Continued)
Symbol
Parameter
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS(ON) Drain-Source On-Voltage
ID(ON) On-State Drain Current
gFS Forward
Transconductance
Conditions
Type
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 A
2N7000
2N7002
NDS7002A
VGS = 10 V,
ID = 500 mA
2N7000
VGS = 10 V,
ID = 500 mA, TC = 125°C
VGS = 4.5 V, ID = 75 mA
VGS = 10 V,
ID = 500 mA
2N7002
VGS = 10 V,
ID = 500 mA, TC = 100°C
VGS = 5 V,
ID = 50 mA
VGS = 5 V,
ID = 50 mA, TC = 100°C
VGS = 10 V,
ID = 500 mA
NDS7002A
VGS = 10 V,
ID = 500 mA, TC = 125°C
VGS = 5 V,
ID = 50 mA
VGS = 5 V,
ID = 50 mA, TC = 125°C
VGS = 10 V,
ID = 500 mA
2N7000
VGS = 4.5 V,
ID = 75 mA
VGS = 10 V,
ID = 500 mA
2N7002
VGS = 5.0 V,
ID = 50 mA
VGS = 10 V,
ID = 500 mA
NDS7002A
VGS = 5.0 V,
ID = 50 mA
VGS = 4.5 V,
VDS = 10 V
2N7000
VGS = 10 V,
VDS 2 VDS(on)
2N7002
VGS = 10 V,
VDS 2 VDS(on)
NDS7002A
VDS= 10 V,
ID = 200 mA
2N7000
VDS2VDS(ON),
ID = 200 mA
2N7002
VDS2VDS(ON),
ID = 200 mA
NDS7002A
Min. Typ. Max. Unit
0.8 2.1
3
1 2.1 2.5
1.2 5
V
1.9 9
1.8 5.3
1.2 7.5
1.7 13.5
1.7 7.5
2.4 13.5
1.2 2
2 3.5
1.7 3
2.8 5
0.6 2.5
V
0.14 0.4
0.6 3.75
0.09 1.5
0.6 1
0.09 0.15
75 600
mA
500 2700
500 2700
100 320
mS
80 320
80 320
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