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FIELD EFFECT POVVER TRANSISTOR
IRF712,713
1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applic...