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IRF712

GE

FIELD EFFECT POWER TRANSISTOR


Description
~[gjD~[¥i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applic...



GE

IRF712

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