WFP830
Silicon N-Channel MOSFET
Features
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especiall...
