eGaN® FET DATASHEET
EPC2202 - Automotive 80 V (D-S) Enhancement
Mode Power Transistor
VDS , 80 V RDS(on) , 17 mΩ ID , 18 A AEC-Q101
D G
S
EPC2202
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode prov...
