Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
HM4618SP
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional...
