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HM4618

H&M Semiconductor
Part Number HM4618
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide ...
Datasheet PDF File HM4618 PDF File

HM4618
HM4618

Overview
HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features ● N-Channel VDS = 40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.
5V ● P-Channel VDS = -40V,ID = -7.
5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram HM4618 Marking and pin assignment Package Marking and Ordering Information SOP-8 top view ...


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